LP7512P70 View Datasheet(PDF) - Filtronic PLC
Part Name
Description
Manufacturer
LP7512P70 Datasheet PDF : 3 Pages
| |||
• FEATURES
♦ 0.7 dB Noise Figure at 12 GHz
♦ 12 dB Associated Gain at 12 GHz
♦ 0.4 dB Noise Figure at 2 GHz
♦ 18 dB Associated Gain at 2 GHz
♦ Low DC Power Consumption: 30mW
LP7512P70
PACKAGED ULTRA LOW NOISE PHEMT
• DESCRIPTION AND APPLICATIONS
The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom”
Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for optimum low noise performance. The LP7512’s active
areas are passivated with Si3N4, and the P70 ceramic package is ideal for low-cost, high-performance
applications that require a surface-mount package.
Typical applications include low noise receiver preamplifiers in wireless systems.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C*
Parameter
Symbol
Test Conditions
Saturated Drain-Source Current** IDSS
VDS = 2 V; VGS = 0 V
Noise Figure
NF
VDS = 2 V; IDS = 25% IDSS
Associated Gain at minimum NF
GA
VDS = 2 V; IDS = 25% IDSS
Transconductance
GM
VDS = 2 V; VGS = 0 V
Gate-Source Leakage Current
IGSO
VGS = -3 V
Gate-Drain Leakage Current
IGDO
VGS = -3 V
Pinch-Off Voltage
VP
VDS = 2 V; IDS = 1 mA
*frequency=18 GHz, unless otherwise noted
**Formerly binned as: LP7512P70-1 = 15-30 mA and LP7512P70–2 = 31-50 mA
Min Typ Max Units
15
30 mA
0.7 1.0 dB
11
12
dB
60
90
mS
1
15 µA
1
15 µA
-0.2 -0.4 -1.5
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01
Email: sales@filss.com
Share Link: 