µ PA1812
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
VGS = −4.0 V
80
TA = 125˚C
60
75˚C
25˚C
40
−25˚C
20
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
VGS = −10 V
TA = 125˚C
40
75˚C
30
25˚C
−25˚C
20
10
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
ID = −2.5 A
80
60
40
20
0
−5
−10 −15
−20
−25
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
VGS = −4.5 V
60
TA = 125˚C
75˚C
25˚C
40
−25˚C
20
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
ID = −2.5 A
VGS = −4.0 V
60
−4.5 V
40
−10 V
20
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
1000
Ciss
Coss
Crss
100
10
−1
−10
VDS - Drain to Source Voltage - V
−100
4
Data Sheet D12967EJ1V0DS00