2SJ448 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SJ448 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ448
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ448 is P-channel MOS Field Effect Transistor designed
for high voltage switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ448
Isolated TO-220
FEATURES
• 250 V rating high withstand voltage
• Low on-state resistance:
RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A)
• Low input capacitance:
Ciss = 470 pF TYP.
• Narrow gate cut-off voltage width:
VGS(off) = −5.5 to −4.0 V
• Built-in gate protection diode
• Full-mold package for easy mounting
5 (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–250
V
5 Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
VGSS
m 30
V
ID(DC)
m 4.0
A
ID(pulse)
m 16
A
PT1
30
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS
–4.0
A
EAS
80
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –125 V, RG = 25 Ω, VGS = –20 ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10029EJ2V0DS00 (2nd edition)
Date Published July 2001 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
1995
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