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TEMT4700 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
TEMT4700
Vishay
Vishay Semiconductors Vishay
TEMT4700 Datasheet PDF : 5 Pages
1 2 3 4 5
TEMT4700
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol Min
Typ
Max Unit
Collector Emitter Breakdown IC = 1 mA
V(BR)CE 70
V
Voltage
O
Collector Dark Current
VCE = 20 V, E = 0
ICEO
1
200 nA
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 CCEO
3
pF
Collector Light Current
lEe = 1 mW/cm2,
= 950 nm, VCE = 5 V
Ica 0.25
0.5
mA
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
ϕ
±60
deg
ll0p.5
830
620...980
nm
nm
Collector Emitter Saturation
Voltage
Rise Time / Fall Time
lEe = 1 mW/cm2,
= 950 nm, IC = 0.1 mA
l W VS = 5 V, IC = 1 mA,
= 950 nm, RL = 1 k
l W VS = 5 V, IC = 1 mA,
= 950 nm, RL = 100
VCEsat
tr / tf
tr / tf
0.15
0.3
V
6
ms
2
ms
Cut–Off Frequency
W VS = 5 V, IC = 2 mA,
RL = 100
fc
180
kHz
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125
104
100
103
75
VCE=20V
RthJA
102
50
101
25
0
0
94 8308
20
40
60
80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
100
20
94 8304
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81556
Rev. 2, 20-May-99

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