Current Transfer Ratio IC/IF at VCE=5.0 V, 25°C
and Collector-Emitter Leakage Current by dash number
-1
-2
-3
-4
Unit
IC/IF at VCE=5.0 V
(IF=10 mA)
IC/IF at VCE=5.0 V
(IF=1.0 mA)
Collector-Emitter
Leakage Current
(VCE=10 V) (ICEO)
40–80 63-125 100–200 160–320 %
30 (>13) 45 (>22) 70 (>34) 90 (>56)
2.0 (≤ 50) 2.0 (≤ 50)
5.0 (≤ 100)
nA
Figure 1. Linear operation (without saturation)
IF
RL=75 Ω
VCC=5 V
IC
45 Ω
IF=10 mA, VCC=5.0 V, TA=25°C
Load Resistance
RL
Turn-On Time
tON
Rise Time
tr
Turn-Off Time
tOFF
Fall Time
tf
Cut-Off Frequency
fCO
75
W
3.0
µs
2.0
2.3
2.0
250
kHz
Figure 2. Switching operation (with saturation)
IF
1KΩ
VCC=5 V
47 Ω
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
tON
tr
tOFF
tf
-1
(IF=20 mA)
3.0
2.0
18
11
-2 and -3
(IF=10 mA)
4.2
3.0
23
14
-4
(IF=5.0 mA)
6.0
µs
4.6
25
15
Figure 3. Current transfer ratio versus diode
current (TA=–25°C, VCE=5.0 V) IC/IF=f (IF)
1
2
3
4
Figure 4. Current transfer ratio versus diode
current (TA=0°C, VCE=5.0 V) IC/IF=f (IF)
1
2
3
4
Figure 5. Current transfer ratio versus diode
current (TA=25°C, VCE=5.0 V) IC/IF=f (IF)
1
2
3
4
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
2
CNY17F
March 17, 2000-13