LR-2B11D View Datasheet(PDF) - Letex Technology

Part Name

Description

Manufacturer

LR-2B11D

PHOTOTRANSISTOR

Letex Technology 

PHOTOTRANSISTOR

Model No. LR-2B11D

ABSOLUTE MAXIMUM RATINGS (Ta =25℃)

CHARACTERISTIC

SYMBOL

RATING

Collector emitter voltage

Vceo

30

Emitter collector voltage

Veco

5

Power dissipation

Pm

75

Collector current

Ic

20

Operating temperature

Topr

-20 to +70

Storage temperature

Tstg

-25 to +80

Lead soldering temperature ( 5mm from body ) 260℃ for 5 sec.

UNIT

V

V

mW

mA

℃

℃

ELECTRICAL OPTICAL CHARACTERISTICS (Ta = 25℃)

CHARACTERISTIC

SYMBOL

CONDITION

Light current

IL

Vce=5V

Ee=1 mW/c ㎡

Collector dark current

Collector-emitter

breakdown voltage

Iceo Vce=10V

BVceo

Ic=1mA

Ee=0 mW/c ㎡

Emitter-collector

breakdown voltage

BVceo

Ic=1mA

Ee=0 mW/c ㎡

Collector-emitter

voltage

saturation

Vce(sat)

Ic=300uA

Ee=0.15mW/c ㎡

Wavelength of the max sensitivity

Half angle

2θ1/2

Unit : mm

Min. Typ. Max. UNIT

0.3 0.6

mA

100 nA

30

V

30

V

0.3 0.4 V

800

140

deg.

1

3

1 23

2

1. Emitter

2. Collector

3. Emitter

Letex Technology Corp.

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