D45C8(2005) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
D45C8 Datasheet PDF : 3 Pages
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D45C8
PNP Power Amplifier
• Sourced from process 5P.
April 2005
1
TO-220
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCEO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
-60
-4.0
-55 to +150
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage
ICES
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
On Characteristics *
IC = -100mA, IB = 0
VCB = -70V, IE = 0
VEB = -5.0V, IB = 0
hFE
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
VCE = -1V, IC = -0.2A
VCE = -1V, IC = -2.0A
IC = -1.0A,IB = -50mA
IC = -1.0A,IB = -100mA
fT
Current Gain Bandwidth Product
IC = -20mA, VCE = -4.0V
Min.
-60
40
20
32
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
60
480
2.1
62.5
Units
V
A
°C
Max. Units
V
-10
µA
-100
µA
120
-0.5
V
-1.3
V
pF
Units
W
mW/°C
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
D45C8 Rev. A
www.fairchildsemi.com
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