PUMB84 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PUMB84 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP resistor-equipped double transistor
Product specification
PUMB4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor
VCBO
VCEO
VEBO
IO
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
Ptot
total power dissipation
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
−50
V
−
−50
V
−
−5
V
−
−100 mA
−
−100 mA
−
200
mW
−65
+150 °C
−
150
°C
−65
+150 °C
−
300
mW
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
ICBO
collector cut-off current
ICEO
collector cut-off current
IEBO
hFE
VCEsat
R1
Cc
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
CONDITIONS
IE = 0; VCB = −50 V
IB = 0; VCE = −30 V
IB = 0; VCE = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −1 mA; VCE = −5 V
IC = −10 mA; IB = −0.5 mA
IE = ie = 0; VCB = −10 V; f = 1 MHz
MIN. TYP. MAX. UNIT
−
−
−
−
−
−
−
−
200 −
−
−
7
10
−
−
−100 nA
−1 µA
−50 µA
−100 nA
−
−150 mV
13 kΩ
3
pF
1999 Apr 12
3
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