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Part Name
Description
NE8500200 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
NE8500200
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC => Renesas Technology
NE8500200 Datasheet PDF : 8 Pages
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NE85002 SERIES
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Total Power Disipation(*)
Drain Current
Gate Current
Channel Temperature
Storage Temperature
V
DSX
V
GSX
V
GDX
P
T
I
D
I
G
T
ch
T
stg
15
–12
–18
13
2.5
13
175
–65 to 175
RECOMMENDING OPERATION RANDGE
CHARACTERISTIC
Drain to Source Voltage
Channel Temperature
Input Power
Gate Resistance
SYMBOL
V
DS
T
ch
Gcomp
Rg
MIN.
9
–
–
–
TYP.
–
–
–
–
MAX. UNIT
10
V
130
˚C
3 dBcomp
2
k
Ω
V
V
V
W
A
mA
˚C
˚C
*T
C
= 25 ˚C
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
SYMBOL
Idss
V
P
gm
R
th
MIN.
950
–3.0
–
–
TYP.
–
–
600
10
MAX.
1900
–1.0
–
15
UNIT
mA
V
mS
˚C/W
TEST CONDITIONS
Vds = 2.5 V, Vgs = 0 V
Vds = 2.5 V, Ids = 8 mA
Vds = 2.5 V, Ids = Idss
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