16N03L View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
16N03L Datasheet PDF : 8 Pages
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RFD16N03L, RFD16N03LSM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFD16N03L, RFD16N03LSM
30
30
±10
16
Refer to Peak Current Curve
Figures 6, 16, 17
90
0.606
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1. TJ = 25oC to 150oC.
LC-
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
BVDSS ID = 250µA, VGS = 0V (Figure 13)
30
VGS(TH) VGS = VDS, ID = 250µA (Figure 12)
1
I DSS
VDS = 30V,
TC = 25oC
-
VGS = 0V
TC = 150oC
-
I GSS
VGS = ±10V
-
rDS(ON) ID = 16A, VGS = 5V (Figure 11)
-
t ON
VDD = 15V, ID ≈ 16A,
-
t d(ON)
RL = 0.93Ω, VGS = 5V,
RGS = 5Ω
-
tr
(Figures 18, 19)
-
t d(OFF)
-
tf
-
t OFF
-
Qg(TOT) VGS = 0V to 10V VDD = 24V,
-
Q g(5)
VGS = 0V to 5V
ID = 16A,
RL = 1.5Ω
-
Q g(TH)
VGS = 0V to 1V IG(REF) = 0.6mA
-
(Figures 15, 20, 21)
-
-
-
2
-
1
-
50
-
±100
-
0.025
-
120
15
-
95
-
25
-
27
-
-
80
50
60
30
36
1.5
1.8
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C ISS
C OSS
C RSS
RθJC
R θ JA
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 14)
Figure 3
TO-251 and TO-252
-
1650
-
-
575
-
-
200
-
-
-
1.65
-
-
100
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Source to Drain Diode Voltage
V SD
ISD = 16A
-
-
1.5
Diode Reverse Recovery Time
t rr
ISD = 16A, dISD/dt = 100A/µs
-
-
75
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
UNITS
V
ns
©2002 Fairchild Semiconductor Corporation
RFD16N03L, RFD16N03LSM Rev. B
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