2SK2981
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
60
VGS = 4.0 V
40
4.5 V
10.0 V
20
0
ID = 10 A
− 50
0
50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
Pulsed
100
VGS = 10 V
10
0V
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1000
100
SWITCHING CHARACTERISTICS
tr
tf
td(off)
10
1
0.1
td(on)
VDD = 15 V
VGS = 10 V
RG = 10 Ω
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 20 A
VGS = 10 V 14
30
12
VGS
10
VDD = 24 V
20
15 V
6V
8
6
10
4
VDS
2
0
0
3 6 9 12 15 18 21 24
QG - Gate Charge - nC
Data Sheet D12355EJ1V0DS00
5