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STPS2060CT(1999) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPS2060CT
(Rev.:1999)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS2060CT Datasheet PDF : 3 Pages
1 2 3
STPS2060CT
THERMAL RESISTANCES
Symbol
Rth(j-c)
Junction to case
Parameter
Rth(c)
Per diode
Total
Coupling
Value
1.6
0.9
0.15
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously :
Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
ELECTRICAL STATIC CHARACTERISTICS (per diode)
Symbol
Parameter
Test Conditions
IR *
Reverse leakage current VR = VRRM
Tj = 25°C
Tj = 125°C
VF **
Forward voltage drop
IF = 20 A
Tj = 125°C
IF = 10 A
Tj = 125°C
IF = 20 A
Tj = 25°C
C
Capacitance
60 V, 1MHz Tj = 125°C
Min. Typ. Max. Unit
70 µA
33 mA
0.8 V
0.58 0.67
0.94
150
pF
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.54 x IF(AV) + 0.013 x IF2(RMS)
2/3

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