HS-1145RH(1999) View Datasheet(PDF) - Intersil

Part Name

Description

Manufacturer

HS-1145RH
(Rev.:1999)

Radiation Hardened, High Speed, Low Power, Current Feedback Video Operational Amplifier with Output Disable

Intersil 

Die Characteristics

DIE DIMENSIONS:

59 mils x 59 mils x 19 mils ±1 mil

(1500µm x 1500µm x 483µm ± 25.4µm)

INTERFACE MATERIALS:

Glassivation:

Type: Nitride

Thickness: 4kÅ ±0.5kÅ

Top Metallization:

Type: Metal 1: AICu(2%)/TiW

Thickness: Metal 1: 8kÅ ±0.4kÅ

Type: Metal 2: AICu(2%)

Thickness: Metal 2: 16kÅ ±0.8kÅ

Metallization Mask Layout

HS-1145RH

Substrate:

UHF-1, Bonded Wafer, DI

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Floating (Recommend Connection to V-)

ADDITIONAL INFORMATION:

Transistor Count:

75

HS-1145RH

-IN

DISABLE

V+

OUT

+IN

V-

OPTIONAL GND (NOTE)

NOTE: This pad is not bonded out on packaged units. Die users may set a GND reference, via this pad, to ensure the TTL compatibility of the DIS

input when using asymmetrical supplies (e.g. V+ = 10V, V- = 0V). See the “Application Information” section for details.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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