WF512K32F-150G4I5A View Datasheet(PDF) - White Electronic Designs => Micro Semi
Part Name
Description
Manufacturer
WF512K32F-150G4I5A Datasheet PDF : 15 Pages
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WF512K32-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
Parameter
Unit
Operating Temperature
-55 to +125
°C
Supply Voltage Range (VCC)
-2.0 to +7.0
V
Signal voltage range (any pin except A9) (2)
-2.0 to +7.0
V
Storage Temperature Range
-65 to +150
°C
Lead Temperature (soldering, 10 seconds)
+300
°C
Data Retention (Mil Temp)
20 years
Endurance - write/erase cycles (Mil Temp) 100,000 cycles min.
A9 Voltage for sector protect (VID) (3)
-2.0 to +14.0
V
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is VCC + 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9
may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input
voltage on A9 is +13.5V which may overshoot to 14.0 V for periods
up to 20ns.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.0 VCC + 0.5
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
A9 Voltage for Sector Protect VID
11.5
12.5
V
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
OE capacitance
COE VIN = 0 V, f = 1.0 MHz
WE1-4 capacitance
HIP (PGA)
CQFP G4T
CQFP G2U/G1U
CWE VIN = 0 V, f = 1.0 MHz
CS1-4 capacitance
CCS VIN = 0 V, f = 1.0 MHz
Data I/O capacitance
CI/O VI/O = 0 V, f = 1.0 MHz
Address input capacitance CAD VIN = 0 V, f = 1.0 MHz
This parameter is guaranteed by design but not tested.
Max
50
20
50
15
20
20
50
Unit
pF
pF
pF
pF
pF
LOW CAPACITANCE CQFP
(TA = +25°C)
Parameter
Symbol
Conditions
OE capacitance
COE VIN = 0 V, f = 1.0 MHz
CQFP G4 capacitance CWE VIN = 0 V, f = 1.0 MHz
CS1-4 capacitance
CCS VIN = 0 V, f = 1.0 MHz
Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz
Address input
capacitance
CAD VIN = 0 V, f = 1.0 MHz
Max
32
32
15
15
32
Unit
pF
pF
pF
pF
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND or VCC
10
µA
Output Leakage Current
ILOx32 VCC = 5.5, VIN = GND or VCC
10
µA
VCC Active Current for Read (1)
ICC1
CS = VIL, OE = VIH, f = 5MHz
190
mA
VCC Active Current for Program or Erase (2)
ICC2
CS = VIL, OE = VIH
240
mA
VCC Standby Current
VCC Static Current
Output Low Voltage
ICC4
VCC = 5.5, CS = VIH, f = 5MHz
ICC3
VCC = 5.5, CS = VIH
VOL
IOL = 8.0 mA, VCC = 4.5
6.5
mA
0.6
mA
0.45
V
Output High Voltage
Low VCC Lock-Out Voltage
VOH1
VLKO
IOH = 2.5 mA, VCC = 4.5
0.85 X VCC
3.2
V
4.2
V
DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically
is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
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