MT28F002B3 View Datasheet(PDF) - Micron Technology
Part Name
Description
Manufacturer
MT28F002B3 Datasheet PDF : 31 Pages
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2Mb
,, ,,,,,,,,, , VIH
, , , , A0-A16/(A17)
VIL
, VIH
SMART 3 BOOT BLOCK FLASH MEMORY
WRITE/ERASE CYCLE
CE#-CONTROLLED WRITE/ERASE
Note 1
tAS
tAH
AIN
tAS
tAH
WE#
VIL
tWS
tWH
VIH
OE# VIL
tCP
tWC
tCPH
tWED1/2/3/4
VIH
CE# VIL
DQ0-DQ7/ VIH
DQ0-DQ15 2 VIL
VHH
tDS
tRS
CMD
in
tDH
tDS
tWB
tDH
CMD/
Data-in
tRHS
[Unlock boot block]
Status
(SR7=0)
Status
(SR7=1)
tRHH
CMD
in
VIH
RP# 3 VIL
VIH
,,,, WP#3 VIL
VPPH2
VPPH1
VPPLK
VPP
tVPS1
tVPS2
VIL
[Unlock boot block]
[5V VPP]
[3.3V VPP]
WRITE SETUP or
ERASE SETUP input
WRITE or ERASE (block)
address asserted, and
WRITE data or ERASE
CONFIRM issued
TIMING PARAMETERS
Commercial Temperature (0°C ≤ TA ≤ +70°C)
Extended Temperature (-40°C ≤ TA ≤ +85°C)
tVPH
,,,, WRITE or ERASE
executed, status register
,, checked for completion
Command for next
operation issued
DON’T CARE
SYMBOL
tWC
tCPH
tCP
tAS
tAH
tDS
tDH
tWS
tWH
tVPS1
-9
MIN MAX
90
20
70
70
10
70
0
0
0
200
-10 ET
MIN MAX
100
30
70
80
10
70
0
0
0
200
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
tVPS2
tRS
tRHS
tWED1
tWED2
tWED3
tWED4
tWB
tVPH
tRHH
-9
MIN MAX
100
1,000
200
6
300
300
600
200
0
0
-10 ET
MIN MAX
100
1,000
200
6
300
300
600
200
0
0
UNITS
ns
ns
ns
µs
ms
ms
ms
ns
ns
ns
NOTE: 1. Address inputs are “Don’t Care” but must be held stable.
2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit (MT28F200B3
only).
3. Either RP# at VHH or WP# HIGH unlocks the boot block.
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
28
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
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