NES2427P-60 View Datasheet(PDF) - NEC => Renesas Technology
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Description
Manufacturer
NES2427P-60 Datasheet PDF : 8 Pages
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NES2427P-60
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = +25 °C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Ratings
Unit
VDS
15
V
VGSO
−7
V
VGDO
−18
V
ID
54
A
IG
360
mA
P Note
tot
200
W
Tch
175
°C
Tstg
−65 to +175
°C
Note TC = +25 °C
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gain Compression
Channel Temperature
Set Drain Current
Gate Resistance
Case Temperature
Symbol
Test Conditions
VDS
Gcomp
Tch
IDset
R Note 1
g
T Note 2
C
VDS = 10.0 V, RF OFF
MIN. TYP. MAX. Unit
−
−
10.0
V
−
−
3.0
dB
−
−
+150
°C
−
12.0
12.0
A
−
2.5
2.5
Ω
−
−
60
°C
Notes 1. Rg is the series resistance between the gate supply and the FET gate.
2. TC MAX. = 60 °C is at the condition of IDset = 12.0 A.
TC (°C) ≤ Tch MAX. (150 °C) − VDS (V) × IDset (A) × Rth MAX. (°C/W)
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Symbol
Test Conditions
Saturated Drain Current
IDSS VDS = 2.5 V, VGS = 0 V
Pinch-off Voltage
Vp VDS = 2.5 V, ID = 168 mA
Thermal Resistance
Rth Channel to Case
Gain 1 dB Compression Output Power PO (1 dB) f = 2.50, 2.70 GHz, VDS = 10.0 V,
Drain Current
Power Added Efficiency
Linear Gain
3rd Order Intermodulation Distortion
ID
ηadd
G Note 2
L
IM3
Rg = 2.5 Ω,
IDset = 12.0 A Total (RF OFF) Note 1
∆f = 1 MHz,
Pout = 39 dBm (2 tones total)
MIN.
−
−4.0
−
47.0
−
−
10.0
−
TYP.
36.0
−2.1
0.65
48.0
16.0
35
12.0
−48
MAX.
−
−
0.75
−
−
−
−
−
Unit
A
V
°C/W
dBm
A
%
dB
dBc
Notes 1. IDset = 6.0 A each drain
2. Pin = 32 dBm
2
Preliminary Data Sheet P14997EJ1V0DS00
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