MCM32A732SG33 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
MCM32A732SG33 Datasheet PDF : 12 Pages
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WRITE CYCLE 1 (W Controlled, See Notes 1, 2, and 3)
Data
Tag/Valid
Dirty
Parameter
Symbol Min Max Min Max Min Max Unit Notes
Write Cycle Time
Address Setup Time
tAVAV 30 — 30 — 30 — ns
4
(A4 – A5) tAVWL 2 — — — — — ns
(A6 – A19)
10 — 2 — 10 —
Address Valid to End of Write
tAVWH 20 — 10 — 20 — ns
Write Pulse Width
tWLWH, 12 — 12 — 12 — ns
tWLEH
Data Setup to Write Time
tDVWH 8 — 6 — 8 — ns
Data Hold from Write Time
tWHDX 0 — 0 — 0 — ns
Write Low to Output High–Z
tWLQZ 0
8
0
6
0
8 ns 6,7,8
Write High to Output Active
tWHQX 4 — 4 — 4 — ns 6,7,8
Write Recovery Time
tWHAX 0 — 0 — 0 — ns
NOTES:
1. A write occurs during the overlap of E low and W low.
2. E = Exx, ET; W = Wxx, WT, WA; G = GA, GB
3. If G goes low coincident with or after W goes low, the output will remain in a high impedance state.
4. All timings are referenced from the last valid address to the first transitioning address.
5. If G ≥ VIH, the output will remain in a high impedance state.
6. At any given voltage and temperature, tWLQZ (max) is less than tWHQX (min), both for a given device and from device to device.
7. Transition is measured ±500 mV from steady–state voltage with load of Figure 1B.
8. This parameter is sampled and not 100% tested.
A (ADDRESS)
E (CHIP ENABLE)
W (WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
WRITE CYCLE 1 (W Controlled, See Notes 1 and 2)
tAVAV
tAVWH
tAVWL
HIGH–Z
tWLQZ
tWLWH
tWLEH
tDVWH
DATA VALID
HIGH–Z
tWHAX
tWHDX
tWHQX
MCM32A732/764•MCM32A832/864•MCM32A932/964
8
MOTOROLA FAST SRAM
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