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TN805-400B View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TN805-400B
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TN805-400B Datasheet PDF : 5 Pages
1 2 3 4 5
TN805/TN815-B
Fig. 5: Relative variation of gate trigger current and
holding current versus junction temperature.
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
Igt,IH[Tj]/Ig,IH[Tj=25°C]
2.0
1.8
Igt
1.6
1.4
1.2 IH
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20 0 20 40 60
80 100 120
ITSM(A)
80
70
60
50
40
30
20
10
0
1
Tj initial=25°C
F=50Hz
Number of cycles
10
100
1000
Fig. 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I2t.
Fig. 8: On-state characteristics (maximum values).
ITSM(A),I²t(A²s)
300
100
50
20
10
1
2
ITSM
I²t
tp(ms)
Tj initial=25°C
ITM(A)
100.0
10.0 Tj=Tj max.
Tj max.:
Vto=0.85V
Rt=46m
Tj=25°C
1.0
VTM(V)
5
10
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9: Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
100
80
60
40
20
S(Cu) (cm²)
0
0 2 4 6 8 10 12 14 16 18 20
4/5

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