NT5SV16M8CT View Datasheet(PDF) - Nanya Technology

Part Name

Description

Manufacturer

NT5SV16M8CT

128Mb Synchronous DRAM

Nanya Technology 

NT5SV32M4CT

NT5SV16M8CT

NT5SV8M16CT

128Mb Synchronous DRAM

Block Diagram

CKE

CKE Buffer

CLK

CLK Buffer

A0

A1

A2

A3

A4

A5

A6

A7

A8

A9

A11

BS0

BS1

A10

Column Decoder

Cell Array

Memory Bank 0

Sense Amplifiers

Column Decoder

Cell Array

Memory Bank 1

Sense Amplifiers

D Q0

DQ X

CS

RAS

CAS

WE

Column Decoder

Cell Array

Memory Bank 2

Sense Amplifiers

DQM

Column Decoder

Cell Array

Memory Bank 3

Sense Amplifiers

Cell Array, per bank, for 8Mb x 4 DQ: 4096 Row x 2048 Col x 4 DQ (DQ0-DQ3).

Cell Array, per bank, for 4Mb x 8 DQ: 4096 Row x 1024 Col x 8 DQ (DQ0-DQ7).

Cell Array, per bank, for 2Mb x 16 DQ: 4096 Row x 512 Col x 16 DQ (DQ0-DQ15).

REV 1.0

May, 2001

5

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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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