NTE16005 View Datasheet(PDF) - NTE Electronics

Part Name

Description

Manufacturer

NTE16005

Silicon Complementary Transistors High Current, General Purpose

NTE Electronics 

NTE16004 (PNP) & NTE16005 (NPN)

Silicon Complementary Transistors

High Current, General Purpose

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.057mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5°C/W

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics (Note 1)

V(BR)CEO) IC = 100mA, IB = 0

ICEX VCE = 100V, VBE = 1.5V

VCE = 70V, VBE = 1.5V, TC = +150°C

IEBO VBE = 7V, IC = 0

DC Current Gain

Collector–Emitter Saturation Voltage

NTE16004

NTE16005

hFE

VCE(sat)

IC = 500mA, VCE = 4V

IC = 1A, VCE = 2V

IC = 500mA, IB = 50mA

Base–Emitter ON Voltage

Small–Signal Characteristics

VBE(on) IC = 500mA, VCE = 4V

Small–Signal Current Gain

hfe IC = 50mA, VCE = 4V, f = 10MHz

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Min Typ Max Unit

75 –

–

V

–

– 0.1 mA

–

– 5.0 mA

–

– 0.1 mA

30 – 130

10 –

–

–

– 0.7 V

–

– 0.5 V

–

– 1.1 V

5

–

–

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