DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NTE191 View Datasheet(PDF) - NTE Electronics

Part Name
Description
Manufacturer
NTE191 Datasheet PDF : 2 Pages
1 2
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
OFF Characteristics (Cont’d)
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
ICBO
IEBO
VCB = 200V, IE = 0
VBE = 6V, IC = 0
– – 0.2
– – 0.1
DC Current Gain (NTE191 & NTE240)
NTE191
NTE240
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
NTE191
NTE240
hFE
VCE(sat)
VBE(on)
IC = 1mA, VCE = 10V, Note 3
IC = 10mA, VCE = 10V, Note 3
IC = 30mA, VCE = 10V, Note 3
IC = 10mA, VCE = 10V, Note 3
IC = 30mA, VCE = 10V, Note 3
IC = 30mA, IB = 3mA
IC = 30mA, VCE = 10V
25 – –
40 – –
40 – –
30 – –
30 – –
– – 0.75
– – 0.85
– – 0.90
Dynamic Characteristics
Current GainBandwidth Product
NTE191
NTE240
fT
IC = 10mA, VCE = 20V,
f = 100MHz, Note 2
45 – –
60 – –
CollectorBase Capacitance
NTE191
NTE240
Ccb
VCB = 20V, IE = 0, f = 1MHz
– – 3.0
– – 8.0
Unit
µA
µA
V
V
V
MHz
MHz
pF
pF
Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.160
(4.06)
.100 (2.54)
.380 (9.65) Max
.050 (1.27)
.280 (7.25) Max
.128 (3.28) Dia
.218
(5.55)
.475
(12.0)
Min
EBC
.995
(25.3)
.100 (2.54)
.200 (5.08)
Collector Connected to Tab

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]