BPW14NC View Datasheet(PDF) - Temic Semiconductors

Part Name

Description

Manufacturer

BPW14NC

Silicon NPN Phototransistor

Temic Semiconductors 

BPW14N

Basic Characteristics

Tamb = 25_C

Parameter

Test Conditions

Symbol Min

Typ

Max Unit

Collector Emitter Breakdown IC = 1 mA

V(BR)CEO 32

V

Voltage

Collector Dark Current

Collector Emitter Capacitance

Collector Base Capacitance

Angle of Half Sensitivity

Wavelength of Peak Sensitivity

Range of Spectral Bandwidth

Collector Emitter Saturation

Voltage

Turn–On Time

Turn–Off Time

Cut–Off Frequency

VCE = 20 V, E = 0

VCE = 5 V, f = 1 MHz, E=0

VCB = 5 V, f = 1 MHz, E=0

m IC = 1 mA, IB = 100 A

W VS=5V, IC=5mA, RL=100

W VS=5V, IC=5mA, RL=100

W VS=5V, IC=5mA, RL=100

ICEO

CCEO

CCBO

ϕ

lp

l0.5

VCEsat

ton

toff

fc

1

100 nA

5.7

pF

6.5

pF

±10

deg

780

nm

520...950

nm

0.3

V

3.2

ms

2.7

ms

170

kHz

Type Dedicated Characteristics

Tamb = 25_C

Parameter

Test Conditions

l Collector Light Current Ee=1mW/cm2,

=950nm, VCE=5V

Type

BPW14NB

BPW14NC

Symbol Min

Ica

1.0

Ica

1.7

Typ Max Unit

1.5 2.0 mA

3.0

mA

2 (6)

TELEFUNKEN Semiconductors

Rev. A2, 15-Jul-96

Share Link: