SI3457DV View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
SI3457DV Datasheet PDF : 5 Pages
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Typical Characteristics
20
VGS = -10V
-6.0V
15
-5.0V
-4.5V
-4.0V
10
5
0
0
-3.5V
-3.0V
1
2
3
4
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = -4.0A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
15
VDS = -5V
12
9
TA = -55oC
125o
25oC
6
3
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
VGS = -4.5V
1.6
-5.0V
1.4
-6.0V
1.2
-7.0V
-8.0V
-10V
1
0.8
0
4
8
12
16
20
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.22
ID = -2.0A
0.18
0.14
0.1
0.06
TA = 25oC
TA = 125oC
0.02
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
TA = 125oC
0.01
0.001
25oC
-55oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si3457DV Rev A(W)
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