HIP1020CK-T(1999) View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
HIP1020CK-T Datasheet PDF : 6 Pages
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HIP1020
Typical Performance Curves
25
20 NOTE 2
15
NOTE 3
C1 = 10nF
10
C122=n2F2nF
5
0
-5
0
10
20
30
40
50
MILLISECONDS
FIGURE 2. HGATE (PIN 4) TURNING ON WITH VCC = 12V
15
NOTE 2
10
5
NOTE 3
C1 = 10nF
C1 = 22nF
25
20
NOTE 2
15
10
5
NOTE 3
C1 = 10nF
C1 = 22nF
0
-5
0
10
20
30
40
50
MILLISECONDS
FIGURE 3. LGATE (PIN 3) TURNING ON WITH VCC = 12V
15
NOTE 2
10
5
NOTE 3
C1 = 10nF
C1 = 22nF
0
0
-5
0
10
20
30
40
50
MILLISECONDS
-5
0
10
20
30
40
50
MILLISECONDS
FIGURE 4. HGATE (PIN 4) TURNING ON WITH VCC = 5V
FIGURE 5. LGATE (PIN 3)TURNING ON WITH VCC = 5V
NOTES: Device is enabled at 10 milliseconds.
2. Pins 3 and 4 are unconnected.
3. Pins 3 and 4 are connected to the gates of “typical” high-performance N-Channel MOSFETs.
Application Information
The HIP1020 was designed specifically to address the
requirements of Device Bay peripherals. The small package,
low cost and integrated features make it the ideal component
for high-side power control of all three Device-Bay rail
voltages without using any additional components except for
the switching MOSFETs themselves. The integrated charge
pump supplies sufficient voltage to fully enhance the lower-
cost N-Channel power MOSFETs, and the internally-
controlled turn-on ramp provides soft switching for all types
of loads.
Although the HIP1020 was developed with Device Bay in
mind, it has the versatility to perform in any situation where
low-cost load switching is required.
MOSFET Selection for Device Bay Peripherals
When selecting power MOSFETs for Device Bay (or any
similar application), two major concerns are the voltage drop
across the MOSFET and the thermal requirements imposed
by the particular application. Voltage drop across the
MOSFET is controlled by its on-state resistance, rDS(ON),
and the peak current through the device, while the thermal
requirements are determined by several factors including
ambient temperature, amount of air flow if any, area of the
copper mounting pad, the thermal characteristics of the
MOSFET and its package, and the average current through
the MOSFET.
2-4
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