HIP1020CK-T(1999) View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
HIP1020CK-T Datasheet PDF : 6 Pages
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HIP1020
Special Applications
The HIP1020 is well suited to work with N-Channel
MOSFETs controlling voltages other than 12V, 5V, or 3.3V
provided three basic constraints are observed. The first
constraint is that the bias voltage for the HIP1020 is either
12V or 5V. Chip operation at voltages significantly below 5V
is not possible, while a bias voltage very much above 12V
can unnecessarily stress the part. Operation between 5V
and 12V can “confuse” the chip as it tries to determine
whether to operate as a voltage doubler or voltage tripler.
The final two constraints have to do with proper operation of
the power MOSFETs. These constraints assume that a rail
voltage, VRAIL, is to be switched using an N-Channel power
MOSFET having a gate-to-source breakdown voltage of
VBR and a threshold voltage of VTH.
VTH < VGATE – VRAIL
(EQ.2)
VBR > VGATE – VRAIL
(EQ.3)
VGATE can be either VHGATE or VLGATE depending on
which pin is connected to the power MOSFET and will be
selected based on which gate voltage is most appropriate for
the application. The requirement in Equation 2 is necessary
to assure that the power MOSFET is fully enhanced. VTH
should be the maximum data-sheet value needed to assure
adequately low rDSON. The requirement in Equation 3
assures that the power MOSFET is protected from
breakdown of the gate oxide.
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