BTS734L1 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BTS734L1 Datasheet PDF : 16 Pages
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Parameter and Conditions, each of the two channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Leakage output current (included in Ibb(off))
VIN = 0
Operating current 10), VIN = 5V, Tj =-40...+150°C
IGND = IGND1 + IGND2,
one channel on:
two channels on:
IL(off)
IGND
BTS 734 L1
Values
Unit
min typ max
--
-- 20 µA
-- 1.8
-- 3.6
4 mA
8
Protection Functions
Initial peak short circuit current limit, (see timing
diagrams, page 13)
each channel, Tj =-40°C: IL(SCp)
47 55 66 A
Tj =25°C:
35 44 54
Tj =+150°C:
21 26 34
two parallel channels
twice the current of one channel
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
two parallel channels
-- 19
-- 19
-- A
--
(see timing diagrams, page 13)
Initial short circuit shutdown time
Tj,start =-40°C: toff(SC)
Tj,start = 25°C:
--
3
-- 2.5
-- ms
--
(see page 11 and timing diagrams on page 13)
Output clamp (inductive load switch off)11)
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature
Thermal hysteresis
VON(CL)
Tjt
∆Tjt
41 47
150
--
-- 10
-- V
-- °C
-- K
Reverse Battery
Reverse battery voltage 12)
Drain-source diode voltage (Vout > Vbb)
IL = - 4.8 A, Tj = +150°C
-Vbb
-VON
--
--
-- 600
32 V
-- mV
10) Add IST, if IST > 0
11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and
circuit page 8).
Semiconductor Group
5
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