BTS650PE3180A View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BTS650PE3180A Datasheet PDF : 16 Pages
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Data Sheet BTS650P
Truth Table
Normal
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over
temperature
Short circuit to
Vbb
Open load
Negative output
voltage clamp
Inverse load
current
Input
current
level
L
H
H
H
L
H
L
H
L
H
L
H
L
L
H
Output
level
L
H
H
H
L
L
L
L
H
H
Z23)
H
L
H
H
Current
Sense
IIS
0
nominal
IIS, lim
0
0
0
0
0
0
<nominal 22)
0
0
0
0
0
Remark
=IL / kilis, up to IIS=IIS,lim
up to VON=VON(Fold back)
IIS no longer proportional to IL
VON > VON(Fold back)
if VON>VON(SC), shutdown will occur
L = "Low" Level; H = "High" Level
Over temperature reset by cooling: Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
Terms
VbIN
Vbb
RIN
V
IN
I IN
I bb
4
IN
3
Vbb
OUT
PROFET
VON
IL
1,2,6,7
VbIS
VIS
IS
5 I IS
DS
R IS
VOUT
Two or more devices can easily be connected in
parallel to increase load current capability.
RON measurement layout
l≤
5.5mm
Vbb force
Out Force Sense
contacts contacts
(both out
pins parallel)
Typical RON for SMD version is about 0.2 mΩ less
than straight leads due to l ≈ 2 mm
22) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
23) Power Transistor "OFF", potential defined by external impedance.
Infineon Technologies AG
Page 7
2003-Oct-01
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