DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HMC283LM1 View Datasheet(PDF) - Hittite Microwave

Part Name
Description
Manufacturer
HMC283LM1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
v04.1201
MICROWAVE CORPORATION
HMC283LM1
SMT MEDIUM POWER GaAs
AMPLIFIER, 17 - 40 GHz
Alternate Applications:
Frequency Multiplier Performance
8
HMC283LM1 can also perform as a frequency multi-
plier. This is accomplished by biasing Vg1 into its
pinchoff region - typically -1V to -2V. By adjusting the
Vg1 bias, the device will operate as a doubler or tri-
pler. Vg2 may also be adjusted to minimize the levels
of unwanted harmonics. The plot shows the perfor-
mance of HMC283 operated as a doubler with Vg1 =
-1V and the remaining gate voltages (Vg2, 3, 4) set to
-0.15V. In this condition the amplifier draws 310mA
at 3.5V drain bias (Vdd) and provides +5dB to -5dB
conversion loss dependent upon the output fre-
quency.
5
4
3
15 dBm
2
1
0
18 dBm
-1
-2
-3
-4
-5
10 dBm
-6
-7
-8
-9
-10
10
15
20
25
30
35
40
OUTPUT FREQUENCY (GHz)
Voltage Detector, Built-In-Test (B.I.T.)
By connecting the Vdet port to a 10k Ohm resistor and monitoring the voltage, a B.I.T. circuit can be created
to monitor changes in the device output power. This circuit is extremely well compensated for temperature
variations as shown in the first plot. The detected voltage does change with frequency and the second plot
shows its variation.
1.6
1.4
1.2
1
0.8
0.6
+85 C
0.4
0.2
-55 C
+25 C
0
10
12
14
16
18
20
22
OUTPUT POWER (dBm)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
10
22 GHz 18 GHz
28 GHz
38 GHz
12
14
16
18
20
22
OUTPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 21

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]