LRS1342 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
Manufacturer
LRS1342 Datasheet PDF : 24 Pages
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LRS1341/LRS1342
Stacked Chip (16M Flash & 2M SRAM)
Write Cycle (F-WE Controlled)1
TA = -25°C to +85°C, VCC = 2.7 V to 3.6 V
PARAMETER
Write Cycle Time
F-RP HIGH Recovery to F-WE going to LOW
F-CE Setup to F-WE going LOW
F-WE Pulse Width
F-RP VHH Setup to F-WE going HIGH
F-WP VIH Setup to F-WE going HIGH
F-VPP Setup to F-WE going HIGH
Address Setup to F-WE going HIGH2
Data Setup to F-WE going HIGH2
Data Hold from F-WE HIGH
Address Hold from F-WE HIGH
F-CE Hold from F-WE HIGH
F-WE Pulse Width HIGH
F-WE HIGH to F-RY/BY going LOW
Write Recovery before Read
F-VPP Hold from Valid SRD, F-RY/BY HIGH-Z
F-RP VHH Hold from Valid SRD, F-RY/BY HIGH-Z
F-WP VIH Hold from Valid SRD, F-RY/BY HIGH
SYMBOL
tAVAV
tPHWL
tELWL
tWLWH
tPHHWH
tSHWH
tVPWH
tAVWH
tDVWH
tWHDX
tWHAX
tWHEH
tWHWL
tWHRL
tWHGL
tQVVL
tQVPH
tQVSL
MIN.
100
10
0
50
100
100
100
50
50
0
0
0
30
0
0
0
0
MAX.
100
NOTES:
1. Read timing characteristics during block erase and word write operations are the same as
during read-only operations. Refer to AC Characteristics for Read Cycle.
2. Refer to the ‘Flash Memory Command Definition’ section for valid AIN and DIN for block erase or word write.
UNIT
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
Data Sheet
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