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HFBR-2316T View Datasheet(PDF) - HP => Agilent Technologies

Part Name
Description
Manufacturer
HFBR-2316T
HP
HP => Agilent Technologies HP
HFBR-2316T Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
6
HFBR-2316T Receiver Absolute Maximum Ratings
Parameter
Storage Temperature
Operating Temperature
Lead Soldering Temperature
Cycle Time
Symbol
TS
TA
Min.
-55
-40
Signal Pin Voltage
Supply Voltage
Output Current
VO
-0.5
VCC - VEE
-0.5
IO
Max.
85
+85
260
10
VCC
6.0
25
Unit
°C
°C
°C
s
V
V
mA
Reference
Note 1
Note 2
CAUTION: The small junction sizes inherent to the design of this bipolar component increase the component's
susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be
taken in handling and assembly of this component to prevent damage and/or degradation which may be
induced by ESD.
HFBR-2316T Receiver Electrical/Optical and Dynamic Characteristics
0 to 70°C; 4.75 V < VCC - VEE < 5.25 V; power supply must be filtered (see note 2).
Parameter
Symbol Min. Typ.[3] Max. Unit
Condition
Ref.
Responsitivity
RP 62.5 µm 6.5 13
19 mV/µW λp = 1300 nm, 50 MHz Note 4
Multimode Fiber
Fig. 6,
62.5/125 µm
10
RP 9 µm 8.5 17
Singlemode Fiber
9/125µm
RMS Output Noise
Voltage
Equivalent Optical
Noise Input Power
(RMS)
Peak Input Optical
Power
VNO
PN, RMS
PR
0.4
-45
0.032
0.59
1.0
-41.5
0.071
mVRMS
mVRMS
dBm
µW
100 MHz Bandwidth,
PR = 0 µW
Unfiltered Bandwidth
PR = 0 µW
@ 100 MHz, PR = 0 µW
Note 5
Fig. 7
Note 5
-11.0 dBm 50 MHz, 1 ns PWD
80
µW
Note 6
Fig. 8
Output Resistance
DC Output Voltage
Supply Current
Electrical Bandwidth
Bandwidth * Rise
Time Product
RO
VO,DC
ICC
BWE
30
0.8 1.8
9
75 125
0.41
Ohm f = 50 MHz
2.6
V
VCC = 5 V, VEE = 0 V
PR = 0 µW
15
mA RLOAD =
MHz -3 dB electrical
Hz *s
Note 7
Note 11
Electrical Rise, Fall
tr,tf
Times, 10-90%
3.3 5.3
ns PR = -15 dBm peak,
@ 50 MHz
Note 8
Fig. 9
Pulse-Width
Distortion
PWD
0.4 1.0
ns PR = -11 dBm, peak
Note 6,9
Fig. 8
Overshoot
2
% PR = -15 dBm, peak
Note 10

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