US1A View Datasheet(PDF) - General Semiconductor
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Description
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US1A Datasheet PDF : 2 Pages
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RATING AND CHARACTERISTIC CURVES US1A THRU US1J
FIG. 1 - FORWARD CURRENT DERATING CURVE
1.2
RESISTIVE OR INDUCTIVE LOAD
1.0
0.8
0.6
1.0
0.2
0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS
0
0 20
40 60 80
100 120 140
150
LEAD TEMPERATURE, °C
30
25
20
15
10
5
0
1
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TL=110°C
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
US1A THRU US1G
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
US1J - US1M
1
10 TJ=150°C
TJ=125°C
TJ=25°C
TJ=100°C
PULSE WIDTH=300µs
0.1
1% DUTY CYCLE
1
0.01
TJ=25°C
0.1
0.001
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
100
US1A - US1G
TJ=25°C
f=1.0 MHZ
Vsiq=50mVp-p
10
US1J - US1M
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
1
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec
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