TSI200B1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TSI200B1 Datasheet PDF : 9 Pages
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TSIxxB1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
IPP
IF
ITSM
Tstg
Tj
TL
Parameter
Non repetitive peak on-sate current (see note 1)
10/1000 µs (open circuit voltage wave shape 10/100 µs)
5/310 µs (open circuit voltage wave shape 10/700 µs)
2/10 µs (open circuit voltage wave shape 2/10 µs)
Maximum DC current
Non repetitive surge peak on-state current
tp = 20 ms
t = 1s
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s
Note 1 : Pulse waveform :
10/1000µs
5/310µs
2/10µs
tr=10µs
tr=5µs
tr=2µs
tp=1000µs
tp=310µs
tp=10µs
% I PP
100
Value
30
40
75
0.2
5
3.5
- 55 to +150
150
260
Unit
A
A
A
°C
°C
50
THERMAL RESISTANCE
Symbol
Rth(j-a) Junction to ambient
Parameter
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Symbol
VRM
VBO
VBR
IH
IBO
IRM
IPP
C
αT
Parameter
Stand-off voltage
Breakover voltage
Breakdown voltage
Holding current
Breakover current
Leakage current at VRM
Peak pulse current
Capacitance
Temperature coefficient
0
tr
tp
t
Value
170
Unit
°C/W
I
IPP
IBO
IH
IRM
V
V
RM
V
BO
6/9
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