TSI200B1RL View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TSI200B1RL Datasheet PDF : 9 Pages
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ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)
1 - PROTECTION DEVICES PARAMETERS
IRM @ VRM
Type
µA
V
max.
TSI62B1
1
50
5
62
TSI180B1
1
50
5
180
TSI200B1
1
50
5
200
TSI220B1
1
50
5
220
TSI265B1
1
50
5
265
Note 1 : Measured at 50 Hz, one cycle
Note 2 : See test cricuit
Note 3 : VR = 0V, F = 1MHz, between pins 1 and 8.
VBO @ IBO
note1
V
max.
90
250
290
330
380
IH
note2
mA
min.
150
150
150
150
150
2 - DIODE BRIDGE PARAMETERS
Symbol
VF
(for one diode)
IF = 20 mA
IF = 100 mA
Test condition
TSIxxB1
IBO
note1
mA
mA
min. max.
50
400
C
note3
pF
typ.
200
50
400 200
50
400 200
50
400 200
50
400 200
Value
Unit
0.9
V
1.1
V
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT : GO - NO GO TEST
R
VBAT = - 48 V
D.U.T.
- VP
Surge generator
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the IH value by short circuiting the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.
3) The D.U.T will come back off-state within a duration of 50 ms max.
7/9
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