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NTE5608 View Datasheet(PDF) - NTE Electronics

Part Name
Description
Manufacturer
NTE5608
NTE-Electronic
NTE Electronics NTE-Electronic
NTE5608 Datasheet PDF : 2 Pages
1 2
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Gate Trigger Current
IGT VD = 12V, Note 1
– 10 mA
Gate Trigger Voltage
VGT VD = 12V, All Quadrants
– 2.5 V
Holding Current
IH
RGK = 1k
– 10 mA
Critical Rate–of–Rise
dv/dt VD = 0.67 x VDRM, RGK = 1k, TJ = +125°C 50
– V/µs
Critical Rate–of–Rise, Off–State dv/dtc IT = 8A, di/dt = 3.55A/ms, TC = +85°C
2
– V/µs
Note 1. For either polarity of gate voltage with reference to electrode MT1.
.147 (3.75)
Dia Max
.420 (10.67)
Max
MT2
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
MT1
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT2

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