NXP Semiconductors
Z0109MA
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 45 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t
I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IG = 20 mA; T2+ G+
IG = 20 mA; T2+ G-
IG = 20 mA; T2- G+
IG = 20 mA; T2- G-
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
1 .2
IT(RMS )
(A)
0 .8
003aac264
16
IT(RMS)
(A)
12
8
0 .4
4
Min Max Unit
-
600 V
-
1
A
-
8
A
-
8.5 A
-
0.32 A2s
-
50
A/µs
-
50
A/µs
-
20
A/µs
-
50
A/µs
-
1
A
-
2
W
-
0.1 W
-40 150 °C
-
125 °C
003a a f977
0
-50
0
50
100
150
Tle a d (°C )
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
0
10-2
10-1
1
10
surge duration (s)
f = 50 Hz; Tlead = 45 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
Z0109MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 13