2N3019 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
2N3019 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN medium power transistor
Product specification
2N3019
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Amplifier and switching circuits.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
handbook, halfpag1e
2
3
2
3
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
hFE
DC current gain
fT
transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
Tcase ≤ 25 °C
IC = 150 mA; VCE = 10 V
IC = 50 mA; VCE = 10 V; f = 100 MHz
MIN.
−
−
−
−
−
100
100
MAX.
140
80
1
800
5
300
−
UNIT
V
V
A
mW
W
MHz
1997 Jun 19
2
Share Link: 