2N3019 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
2N3019 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistor
Product specification
2N3019
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
Tcase ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
MIN.
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
140
80
7
1
1
200
800
5
+150
200
+150
UNIT
V
V
V
A
A
mA
mW
W
°C
°C
°C
VALUE
218
35
UNIT
K/W
K/W
1997 Jun 19
3
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