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USB6B1(2006) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
USB6B1
(Rev.:2006)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
USB6B1 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Characteristics
1
Characteristics
USB6B1
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VPP Peak pulse voltage
IEC61000-4-2 contact discharge
8
IEC61000-4-2 air discharge
15
kV
MIL STD883C-Method 30 15-6
4
PPP Peak pulse power
IPP Peak pulse current
8/20 µs
8/20 µs
2/10 µs
500
W
25
A
40
Tstg Storage temperature range
Top Operating temperature range
TL Lead solder temperature (10 s duration)
- 55 to + 150 ° C
- 40 to + 85 ° C
260
°C
Table 2. Electrical characteristics (Tamb = 25° C)
Symbol
Parameter
Value
Unit
Min Typ Max
VBR Breakdown voltage between VBUS and GND IR = 1 mA
6
V
IRM Leakage current
VRM = 5.25 V
10 µA
Capacitance between pins D+ and D-
VOSC = 30 mV, F = 1 MHz, VR = 0 V
C
VCC
not connected
15
pF
Capacitance between pins D+(or D-) and GND
VOSC = 30 mV, F = 1 MHz, VR = 5 V
VCC = 5 V
25
pF
2/9

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