SYMBOL
PARAMETER
IOZ Three-state output leakage current
TTL 2.0mA buffer
TTL 4.0mA buffer, CMOS
TTL 8.0mA buffer
TTL 12.0mA buffer *
Cold Spare Inputs - normal mode
CONDITION
MIN TYP MAX UNIT
VDD = 5.5V
-5
-10
-20
-30
VO = 0V and 5.5V
-5
ïA
5
10
20
30
-5
Cold Spare Inputs - cold spare mode
IOS4,5
IDDQ
Short-circuit output current
TTL 2.0mA buffer
TTL 4.0mA buffer, CMOS
TTL 8.0mA buffer
TTL 12.0mA buffer *
Quiescent Supply Current6
Group A subgroups 1,3
VDD = VSS = 0
-5
VDD = 0 to 5.5V
VO = 0V and 5.5V
-50
-100
-200
-300
VDD = 5.5V
200K gates
400K gates
500K gates
-5
mA
50
100
200
300
ïA
50
100
180
Group A subgroup 2
VDD = 5.5V
200K gates
400K gates
500K gates
mA
1
2
3
Group A, subgroup 1
RHA Designator: M, D, P, L, R,F
VDD = 5.5V
200K gates
400K gates
500K gates
mA
4
8
12
CIN7 Input capacitance
ï€
23
pF
COUT7
Output capacitance
TTL 2.0mA buffer
ï€
TTL 4.0mA buffer, CMOS
TTL 8.0mA buffer
TTL 12.0mA buffer *
pF
22
26
26
26
CIO7
Bidirect I/O capacitance
TTL 4.0mA buffer, CMOS
ï€
TTL 8.0mA buffer
TTL 12.0mA buffer *
pF
24
26
26
Notes:
* Contact Aeroflex prior to usage.
1. These devices are capable of being configured and support dual voltage: 3.3V and/or 5.0V bus, 2.5V core/3.3V or 5.0V core/5.0V bus. The supply voltage range
shall be specified in the AID.
2. Devices are supplied to this drawing will meet all levels M, D, P, L, R and F of irradiation. However, this device is only tested at the "R" and "F" level. Pre and Post
irradiation values are identical unless otherwise specified in Table 1. When performing post irradiation electrical measurements for any RHA level, TA = +25oC.
11