14N37GVL View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
14N37GVL Datasheet PDF : 6 Pages
| |||
HGT1S14N37G3VLS, HGTP14N37G3VL
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Gate to Emitter Breakdown Voltage
Current Turn-On Delay Time -
Resistive Load
BVGES IGES = ±2mA
±12
±14
-
V
td(ON)I
IC = 6.5A, RG =
RL = 2.1Ω, VDD
1kΩ, VGE
= 14V, TJ
=
=
5V,
150oC
-
1
4
µs
(Figure 14)
Current Turn-On Rise Time -
Resistive Load
Current Turn-Off Time -
Inductive Load
Inductive Use Test
Thermal Resistance
trI
IC = 6.5A, RG = 1kΩ
-
3
VGE
VDD
=
=
51V4V, R, TLJ==21.15Ω0oC
(Figure
14)
td(OFF)I + tfI IC = 6.5A, RG = 1kΩ
-
10
VGE = 5V, L = 300µH
VDD = 300V, TJ = 150oC (Figure 14)
ISCIS L = 3mH, VG = 5V,
TC = 150oC 11.5
-
RG = 1kΩ
(Figures 1 and 2)
TC = 25oC
15
-
RθJC
(Figure 18)
-
-
7
µs
30
µs
-
A
-
A
1.1
oC/W
Typical Performance Curves Unless Otherwise Specified
60
RG = 1kΩ, VGE = 5V
52
44
ISCIS CAN BE LIMITED BY gfs at VGE = 5V
36
28
TJ = 25oC
20
12
4
40
TJ = 150oC
80
120
160
200
tAV, TIME IN AVALANCHE (ms)
FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs TIME IN AVALANCHE
56
RG = 1kΩ, VGE = 5V
48
40
ISCIS CAN BE LIMITED BY gfs at VGE = 5V
32
24
16
8
TJ = 150oC
TJ = 25oC
0
0
2
4
6
8
10
L, INDUCTANCE (mH)
FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs INDUCTANCE
1.28
ICE = 6A
1.24
1.20
1.16
VGE = 4.0V
1.12
1.08
VGE = 4.5V
1.04
VGE = 5.0V
1.00
-50
25
100
175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERARURE
1.50
1.46
1.42
1.38
ICE = 10A
VGE = 4.0V
VGE = 4.5V
1.34
VGE = 5.0V
1.30
-50
25
100
175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B
Share Link: 