PBSS2515VS View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PBSS2515VS Datasheet PDF : 12 Pages
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Philips Semiconductors
15 V low VCEsat NPN double transistor
Product specification
PBSS2515VS
102
handbook, halfpage
RCEsat
(Ω)
10
1
(1)
(2)
(3)
MLD648
10−110−1
1
10
102
103
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6 Equivalent on-resistance as a function of
collector current; typical values.
1200
handbook, halfpage
IC
(mA)
800
400
0
0
2
MLD644
(4) (3) (2) (1)
(5)
(6)
(7)
(8)
(9)
(10)
4
6
8
10
VCE (V)
Tamb = 25 °C.
(1) IB = 4.6 mA.
(2) IB = 4.14 mA.
(3) IB = 3.68 mA.
(4) IB = 3.22 mA.
(5) IB = 2.76 mA.
(6) IB = 2.3 mA.
(7) IB = 1.84 mA.
(8) IB = 1.38 mA.
(9) IB = 0.92 mA.
(10) IB = 0.46 mA.
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
2001 Nov 07
6
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