PBSS3515VS View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PBSS3515VS Datasheet PDF : 12 Pages
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Philips Semiconductors
15 V low VCEsat PNP double transistor
Product specification
PBSS3515VS
FEATURES
• 300 mW total power dissipation
• Very small 1.6 x 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
• Low collector-emitter saturation voltage
• High current capability
• Improved thermal behaviour due to flat leads
• Replaces two SC75/SC89 packaged low VCEsat
transistors on same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
ICM
RCEsat
collector-emitter voltage
peak collector current
equivalent on-resistance
MAX. UNIT
−15 V
−1
A
<500 mΩ
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
APPLICATIONS
• General purpose switching and muting
• Low frequency driver circuits
• LCD backlighting
• Audio frequency general purpose amplifier applications
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PNP low VCEsat double transistor in a SOT666 plastic
package.
NPN complement: PBSS2515VS.
6
5
4
65 4
TR2
TR1
1
2
3
Top view
MAM450
123
MARKING
TYPE NUMBER
PBSS3515VS
MARKING CODE
35
Fig.1 Simplified outline (SOT666) and symbol.
2001 Nov 07
2
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