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TEA5040S View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TEA5040S
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TEA5040S Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TEA5040S
ELECTRICAL OPERATING CHARACTERISTICS (continued)
Symbol
Parameter
TV MODE INPUTS
Luminance Input Pin 12
Y
Signal Amplitude (100% white)
V12 DC Level (on black level)
I12
Input Current
R-Y Input Pin 11
R-Y Signal Amplitude (75% saturation)
V11 DC Level (on black level)
I11
Input Current
B-Y Input Pin 10
B-Y Signal Amplitude (75% saturation)
V10 DC Level (on black level)
I10
Input Current
RGB INPUTS PINS 2-3-4-5-6-7
Signal Amplitude (100% saturation without synchro pulse)
DC Level (on black level)
Input Current
FAST BLANKING INPUTS PINS 8-9
TV/RGB Mode Threshold
Switching Time
Switching Time Delay
CLAMP MEMORY OUTPUT PINS 17-18-19
Voltage Range
Input Current
REFERENCE PARAMETER
VREF Reference Voltage Pin 16
SANDCASTLE INPUT PIN 32
Blanking Threshold
Burst Gate Threshold
Line Retrace Threshold
Input Current Pin 32 Grounded
DRIVE AND CUT-OFF MEMORY OUTPUT PINS 23-24-26-27-29-30
Drive Leakage Current Pins 23-26-29
Cut-off Leakage Current Pins 24-27-30
Minimum Active Level Pins 24-27-30
LEAKAGE CURRENT MEMORY OUTPUT PIN 35
Voltage Range
Input Current (during picture pin 35 = 5V)
Charging Output Impedance
Minimum Voltage (pin 34 grounded)
CATHODE CURRENTS INPUT PIN 34
Output Current during the Line Trace (pin 34 grounded)
Voltage during Lines 17, 18, 19
Voltage Difference during Lines 21, 22, 23 and during Line 20
8/12
Min. Typ. Max. Unit
1
1.5 Vpp
4
V
10 µA
1.05 1.47 Vpp
4.7
V
2 µA
1.33 1.86 Vpp
4.7
V
2 µA
0.7
1
Vpp
3.2
V
3 µA
0.5
0.9 V
70
ns
70
ns
8 10 11 V
2 µA
4
V
1 1.4 1.8 V
6.4 6.9 7.6 V
3.1 3.4 3.8 V
100 µA
1 µA
1 µA
4
V
3
V
0.5 µA
500
3
V
10 µA
0.26 0.35 0.50 V
0.4
V

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