Philips Semiconductors
Schottky barrier triple diode
GRAPHICAL DATA
103
handbook, halfpage
IF
(mA)
102
MLD549
(1) (2)
(3)
10
(2)
(1)
(3)
1
0
0.4
0.8
1.2
1.6
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Product specification
1PS88SB82
103
handbook, halfpage
IR
(µA)
102
(1)
10
(2)
1
10−1
(3)
MLD550
10−2
0
5
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
10
15
VR (V)
Fig.3 Reverse current as a function of reverse
voltage; typical values.
handbook1, .h2alfpage
Cd
(pF)
1
0.8
0.6
0.4
0
0
2
4
6
MLD551
8
10
VR (V)
103
handbook, halfpage
rD
(Ω)
102
MLD552
10
1
10−1
1
10
102
IF (mA)
f = 1 MHz; Tamb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
Fig.5 Differential diode forward resistance as a
function of forward current; typical values.
2001 Feb 16
4