Philips Semiconductors
High-speed diodes
Product specification
BA316; BA317; BA318
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• High switching speed: max. 4 ns
• General application
• Continuous reverse voltage: 10 V,
30 V, 50 V
• Repetitive peak reverse voltage:
max. 15 V, 40 V, 60 V
• Repetitive peak forward current:
max. 225 mA.
APPLICATIONS
• High-speed switching.
DESCRIPTION
The BA316, BA317, BA318 are high-speed switching diodes fabricated in
planar technology, and encapsulated in hermetically sealed leaded glass
SOD27 (DO-35) packages.
handbook, halfpagke
a
MAM246
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
repetitive peak reverse voltage
BA316
BA317
BA318
VR
continuous reverse voltage
BA316
BA317
BA318
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
MIN.
−
−
−
−
MAX. UNIT
15 V
40 V
60 V
−
10 V
−
30 V
−
50 V
−
100 mA
−
225 mA
−
4A
−
1A
−
0.5 A
−
350 mW
−65 +200 °C
−
200 °C
1996 Sep 03
2