2SK3699-01MR View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

2SK3699-01MR

N-CHANNEL SILICON POWER MOSFET

Unspecified 

2SK3699-01MR

Characteristics

Allowable Power Dissipation

PD=f(Tc)

60

50

40

30

20

10

0

0

25

50

75

100

125

150

Tc [°C]

FUJI POWER MOSFET

Typical Output Characteristics

ID=f(VDS):80 µs pulse test,Tch=25°C

5

20V

10V

7.0V

6.5V

4

6.0V

3

2

VGS=5.5V

1

0

0

5

10

15

20

25

VDS [V]

Typical Transfer Characteristic

ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C

Typical Transconductance

gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C

10

1

0.1

0 1 2 3 4 5 6 7 8 9 10

VGS[V]

1

0.1

1

10

ID [A]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80 µs pulse test,Tch=25°C

VGS=5.5V

4.4

6.0V

6.5V

7.0V

4.2

10V

4.0

20V

3.8

3.6

3.4

3.2

3.0

0

1

2

3

4

5

ID [A]

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=1.85A,VGS=10V

12

10

8

6

max.

4

typ.

2

0

-50 -25 0

25 50 75 100 125 150

Tch [°C]

2

Share Link: