AP70T03GJ-HF View Datasheet(PDF) - Advanced Power Electronics Corp

Part Name

Description

Manufacturer

AP70T03GJ-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

200

T C =25 o C

150

100

10V

8.0V

6.0V

50

V G =4.0V

0

0.0

1.5

3.0

4.5

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

60

I D =20A

T C =25 ℃

40

20

0

0

4

8

12

16

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

1000

100

10

T j =175 o C

T j =25 o C

1

0.1

0

0.5

1

1.5

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

AP70T03GH/J-HF

120

T C =175 o C

90

10V

8.0V

6.0V

60

V G =4.0V

30

0

0.0

1.5

3.0

4.5

V DS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2

I D =33A

V G =10V

1.6

1.2

0.8

0.4

-50

25

100

175

T j , Junction Temperature ( o C)

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

2.5

2

1.5

1

0.5

-50

25

100

175

T j , Junction Temperature ( o C )

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

3

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