DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

532BA000210BG View Datasheet(PDF) - Silicon Laboratories

Part Name
Description
Manufacturer
532BA000210BG Datasheet PDF : 33 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Si532
Table 3. CLK± Output Levels and Symmetry
Parameter
LVPECL Output Option1
LVDS Output Option2
Symbol
VO
VOD
VSE
VO
Test Condition
mid-level
swing (diff)
swing (single-ended)
mid-level
Min
VDD – 1.42
1.1
0.5
1.125
Typ
1.20
Max Units
VDD – 1.25 V
1.9
VPP
0.93
VPP
1.275
V
CML Output Option2
CMOS Output Option3
Rise/Fall time (20/80%)
VOD
VO
VOD
VOH
VOL
tR, tF
swing (diff)
0.32
0.40
0.50
VPP
mid-level
swing (diff)
IOH = 32 mA
IOL = 32 mA
LVPECL/LVDS/CML
VDD – 0.75
V
0.70
0.95
1.20
VPP
0.8 x VDD
VDD
V
0.4
350
ps
CMOS with CL = 15 pF
1
ns
Symmetry (duty cycle)
SYM LVPECL: VDD – 1.3 V (diff)
LVDS: 1.25 V (diff)
45
55
%
CMOS: VDD/2
Notes:
1. 50 to VDD – 2.0 V.
2. Rterm = 100 (differential).
3. CL = 15 pF
Table 4. CLK± Output Phase Jitter
Parameter
Phase Jitter (RMS)*
for FOUT > 500 MHz
Phase Jitter (RMS)*
for FOUT of 125 to 500 MHz
Symbol
Test Condition
Min
φJ
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
LVPECL
CML
LVDS
φJ
12 kHz to 20 MHz (OC-48)
LVPECL
CML
LVDS
*Note: Differential Modes: LVPECL/LVDS/CML. Refer to AN256 for further information.
Typ
0.40
0.30
0.35
0.40
0.40
0.45
0.45
Max Units
0.50 ps
0.40 ps
0.47
0.49
0.50 ps
0.50
0.52
Rev. 1.0
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]