Huajing Discrete Devices
○R
CS2N60F A9H
Characteristics Curve:
10
1
0.1
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25℃ Single Pulse
100μs
1 ms
10ms
DC
0.01
1
10
100
1000
Vds , Drain-to-Source Voltage , Volts
Figure 1 Maximun Forward Bias Safe Operating Area
2.5
2.0
1.5
1.0
0.5
24
16
8
0
0
25
50
75
100 125 150
Tc , Case Temperature , C
Figure 2 Maximun Power Dissipation vs Case Temperature
4
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
VGS=15V
3
VGS=7V
2
VGS=6V
VGS=6.5V
1
VGS=4.5V
VGS=5.5V
0
0
0
25
50
75
100 125 150
TC , Case Temperature , C
0
5
10
15
20
25
Vds , Drain-to-Source Voltage , Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Figure 4 Typical Output Characteristics
1
50%
20%
0.1 10%
5%
0.01
Single pulse
0.001
0.00001
2%
1%
0.0001
PDM
t1
t2
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.001
0.01
0.1
1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 10 2012