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CP2109-A01-GM View Datasheet(PDF) - Silicon Laboratories

Part Name
Description
Manufacturer
CP2109-A01-GM
Silabs
Silicon Laboratories Silabs
CP2109-A01-GM Datasheet PDF : 26 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CP2102/9
3. Electrical Specifications
Table 2. Absolute Maximum Ratings
Parameter
Symbol Test Condition
Min
Typ
Max
Unit
Ambient Temperature under Bias
Storage Temperature
Voltage on VDD with respect to GND
Maximum Total Current through VDD
and GND
TBIAS
TSTG
VDD
–55
125
°C
–65
150
°C
–0.3
4.2
V
500
mA
Maximum Output Current sunk by
RST or any I/O pin
100
mA
CP2102
Voltage on any I/O Pin, VBUS, or RST
with respect to GND
–0.3
5.8
V
CP2109
Voltage on any I/O Pin, VBUS, or RST
with respect to GND
VDD > 3.0 V
VDD not powered
–0.3
–0.3
5.8
V
VDD +
3.6
Note: Stresses above those listed may cause permanent device damage. This is a stress rating only, and functional operation
of the devices at or exceeding the conditions in the operation listings of this specification is not implied. Exposure to
maximum rating conditions for extended periods may affect device reliability.
6
Rev. 1.8

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